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Optical studies of the surface effects from the luminescence of single GaN/InGaN nanorod light emitting diodes fabricated on a wafer scale

Abstract:

Time-resolved and time-integrated microphotoluminescence studies at 4.2 K were performed on a single InGaN/GaN nanorod light emitting diode, fabricated in an array, on a wafer scale by nanoimprint lithography. Emission properties and carrier dynamics of the single nanorods are presented. Sharp peaks of 2 meV line-width were observed. The single nanorods possess longer decay rates than an unprocessed wafer at delay-times above 50 ns after excitation. The time evolution of the photoluminescence...

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Publication status:
Published

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Publisher copy:
10.1063/1.4795294

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
102
Issue:
11
Pages:
111906-111906
Publication date:
2013-03-18
DOI:
ISSN:
0003-6951
URN:
uuid:e7e2bc2c-5ab4-471b-aff0-a1e76723d2b4
Source identifiers:
396154
Local pid:
pubs:396154
Language:
English

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