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Enhancement of resistivity of Czochralski silicon by deep level manganese doping

Abstract:

Deep level manganese (Mn) doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 1014 cm-2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 Ω cm for the undoped substrate to a maximum of 10 kΩ cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for ...

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Publication status:
Published

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Publisher copy:
10.1063/1.2349836

Authors


de Groot, CH More by this author
Ashburn, P More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Journal:
APPLIED PHYSICS LETTERS
Volume:
89
Issue:
11
Pages:
112122-112122
Publication date:
2006-09-11
DOI:
ISSN:
0003-6951
URN:
uuid:e7e090cf-b917-4137-9ec6-482ee87d6e45
Source identifiers:
15661
Local pid:
pubs:15661
Language:
English

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