Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen precipitation gives rise to recombination centres, which can reduce cell efficiencies by as much as 4% (absolute). We have studied the recombination behaviour in p-type and n-type monocrystalline ...Expand abstract
- Publication status:
- Peer review status:
- Peer reviewed
- Publisher's version
- Copyright holder:
- Murphy et al.
- Copyright date:
- Copyright © 2013 The Authors. Published by Elsevier B.V. Open access under CC BY license.
Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation
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