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Journal article

Microsecond carrier lifetimes in InGaAsP quantum wells emitting at lambda=1.5 mu m

Publication status:
Published

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Publisher copy:
10.1063/1.1459490

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Buller, GS More by this author
Marshall, D More by this author
Button, CC More by this author
Journal:
APPLIED PHYSICS LETTERS
Volume:
80
Issue:
11
Pages:
1870-1872
Publication date:
2002-03-18
DOI:
ISSN:
0003-6951
URN:
uuid:e6236257-e471-4664-8364-047a67de23ff
Source identifiers:
11524
Local pid:
pubs:11524

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