Journal article icon

Journal article

Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence

Abstract:

In this paper we describe the use of electron backscattered diffraction (EBSD) for the characterisation of nitride thin films, and report its use in the study of the spatial variation of strain across an epitaxially laterally overgrown GaN (ELOG) thin film. We also discuss the combination of luminescence and EBSD measurements to enable luminescence properties of samples to be directly correlated with their crystallographic properties. We compare photoluminescence spectra and EBSD measurements...

Expand abstract

Actions


Access Document


Publisher copy:
10.1002/pssc.200390107

Authors


Expand authors...
Journal:
Physica Status Solidi C: Conferences
Volume:
0
Issue:
1
Pages:
532-536
Publication date:
2002-01-01
DOI:
EISSN:
1610-1642
ISSN:
1610-1634
URN:
uuid:e4594513-2737-4ceb-9ee2-0bfd84acbbab
Source identifiers:
394104
Local pid:
pubs:394104
Language:
English

Terms of use


Metrics


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP