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Determination of the structural and luminescence properties of nitrides using electron backscattered diffraction and photo- and cathodoluminescence

Abstract:

In this paper we describe the use of electron backscattered diffraction (EBSD) for the characterisation of nitride thin films, and report its use in the study of the spatial variation of strain across an epitaxially laterally overgrown GaN (ELOG) thin film. We also discuss the combination of luminescence and EBSD measurements to enable luminescence properties of samples to be directly correlated with their crystallographic properties. We compare photoluminescence spectra and EBSD measurements...

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Publisher copy:
10.1002/pssc.200390107

Authors


Trager-Cowan, C More by this author
Sweeney, F More by this author
Wilkinson, AJ More by this author
Watson, IM More by this author
Middleton, PG More by this author
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Journal:
Physica Status Solidi C: Conferences
Volume:
0
Issue:
1
Pages:
532-536
Publication date:
2002
DOI:
EISSN:
1610-1642
ISSN:
1610-1634
URN:
uuid:e4594513-2737-4ceb-9ee2-0bfd84acbbab
Source identifiers:
394104
Local pid:
pubs:394104
Language:
English

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