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Grain boundary fracture and plasticity in Sigma=25 bicrystals of silicon

Abstract:
Grain boundary fracture was investigated in Si Sigma=25 bicrystalline 4 point bend specimens stressed under a constant load at 550 and 600 degrees C. Dislocation sources were placed near the GB. Specimens loaded to stresses higher than 310 MPa always fractured at the GB soon after the first dislocation arrived at the boundary. At lower applied loads, dislocation transmission through the GB was observed, and fracture, if it occurred, was much delayed.
Publication status:
Published

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Authors


Jacques, A More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Volume:
207-
Issue:
PART 1
Pages:
153-156
Publication date:
1996
ISSN:
0255-5476
URN:
uuid:e324d848-a12a-4e2e-a1bd-262492d738a0
Source identifiers:
25965
Local pid:
pubs:25965
ISBN:
0-87849-720-X

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