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Spin-polarized electronic reflections at metal-oxide interfaces

Abstract:

The ultra-thin oxide tunnel barrier employed in magnetic tunnel junctions stack has to be of very high quality in terms of large scale homogeneity of its thickness and height parameters. For controlling precisely oxidation kinetic, we used spin valves as an oxidation progress probe. By measuring the magnetoresistance effect versus the oxidation time we are able to detect under- or over-oxidation of the metallic material. This technique consists of analysing the ability of spin-dependent elect...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
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Volume:
240
Issue:
1-3
Pages:
140-142
Publication date:
2002-02-05
DOI:
ISSN:
0304-8853
URN:
uuid:e2efc5ce-681b-4eaa-a891-16260e51a1f9
Source identifiers:
29231
Local pid:
pubs:29231

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