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Spin-polarized electronic reflections at metal-oxide interfaces

Abstract:

The ultra-thin oxide tunnel barrier employed in magnetic tunnel junctions stack has to be of very high quality in terms of large scale homogeneity of its thickness and height parameters. For controlling precisely oxidation kinetic, we used spin valves as an oxidation progress probe. By measuring the magnetoresistance effect versus the oxidation time we are able to detect under- or over-oxidation of the metallic material. This technique consists of analysing the ability of spin-dependent elect...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Journal:
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
Volume:
240
Issue:
1-3
Pages:
140-142
Publication date:
2002-02-01
Event title:
4th International Symposium on Metallic Multilayers
DOI:
ISSN:
0304-8853
Source identifiers:
29231
Keywords:
Pubs id:
pubs:29231
UUID:
uuid:e2efc5ce-681b-4eaa-a891-16260e51a1f9
Local pid:
pubs:29231
Deposit date:
2012-12-19

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