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Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor

Abstract:

InAs/GaSb strained layer superlattices have been grown by atmospheric pressure MOVPE and the growth conditions optimised by observing, in real time, the in-situ UV absorption of the alkyls in the growth chamber. The Raman scattering of folded longitudinal acoustic phonons in the superlattices has been used as a probe of the periodicity of the superlattice. Atomic force microscopy has also been used to give information about the final surface morphology and RMS roughness of the superlattices. ...

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Publication status:
Published

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Journal:
JOURNAL OF CRYSTAL GROWTH
Volume:
170
Issue:
1-4
Pages:
777-782
Publication date:
1997-01-01
Event title:
8th International Conference on Metalorganic Vapour Phase Epitaxy
DOI:
ISSN:
0022-0248
Source identifiers:
16707
Keywords:
Pubs id:
pubs:16707
UUID:
uuid:e2c7f655-30c9-4cd5-9429-7bd1ea830020
Local pid:
pubs:16707
Deposit date:
2012-12-19

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