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Many-body effects in carrier capture and energy relaxation in self-organized InAs/GaAs quantum dots

Abstract:
We have measured carrier dynamics in self-organized InAs/GaAs quantum dots using femtosecond time-resolved photoluminescence. The observation of intensity building up sequentially from the lower states is attributed to fast trapping and intra-dot relaxation; the dependence of population risetimes on carrier density indicates that relaxation is governed by carrier-carrier scattering. Strong many-body effects are also observed at high excitation densities. (C) 1999 Elsevier Science B.V. All rights reserved.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Publisher:
Elsevier
Journal:
PHYSICA B
Volume:
272
Issue:
1-4
Pages:
12-14
Publication date:
1999-12-01
Event title:
11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS 11)
DOI:
ISSN:
0921-4526
Source identifiers:
18956
Keywords:
Pubs id:
pubs:18956
UUID:
uuid:e2b029d8-73c9-44ea-ade6-a31ac07d6268
Local pid:
pubs:18956
Deposit date:
2012-12-19

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