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ONE-DIMENSIONAL TRANSPORT AND GATING OF INAS/GASB STRUCTURES

Abstract:

Semimetallic InAs/GaSb structures are known to contain simultaneously both two dimensional electrons in the InAs and two dimensional holes in the GaSb layers. Following successful anodisation of undoped GaSb, we describe transport measurements performed on a wide area gated sample and also a single quantum point contact. In the large area gated sample, the electron density increases and the hole density decreases when a positive gate voltage is applied. Under negative bias, an additional laye...

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Publication status:
Published

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Publisher copy:
10.1006/spmi.1994.1009

Authors


LAKRIMI, M More by this author
SALESSE, A More by this author
HOUSTON, G More by this author
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Publisher:
Academic Press Ltd
Journal:
SUPERLATTICES AND MICROSTRUCTURES
Volume:
15
Issue:
1
Pages:
41-45
Publication date:
1994
DOI:
ISSN:
0749-6036
URN:
uuid:e221a572-90f1-49ce-afbc-9b306040f39c
Source identifiers:
19197
Local pid:
pubs:19197

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