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Fabrication of gated polycrystalline silicon field emitters

Abstract:
Polycrystalline silicon is currently being investigated as the cathode material for flat panel displays using field emission. Conventional silicon microfabrication techniques have been adapted to produce highly uniform arrays of gridded polysilicon field emitters.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST
Pages:
367-370
Publication date:
1996-01-01
Event title:
9th International Vacuum Microelectronics Conference(IVMC'96)
Source identifiers:
10947
ISBN:
0780335945
Pubs id:
pubs:10947
UUID:
uuid:e1cc9a66-f5c0-4b79-84e3-ba90d2acff25
Local pid:
pubs:10947
Deposit date:
2012-12-19

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