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Utilizing boron nitride sheets as thin supports for high resolution imaging of nanocrystals.

Abstract:

We demonstrate the use of thin BN sheets as supports for imaging nanocrystals using low voltage (80 kV) aberration-corrected high resolution transmission electron microscopy. This provides an alternative to the previously utilized 2D crystal supports of graphene and graphene oxide. A simple chemical exfoliation method is applied to get few layer boron nitride (BN) sheets with micrometer-sized dimensions. This generic approach of using BN sheets as supports is shown by depositing Mn doped ZnSe...

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Publication status:
Published

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Authors


Kirkland, AI More by this author
Schäffel, F More by this author
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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
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Journal:
Nanotechnology
Volume:
22
Issue:
19
Pages:
195603
Publication date:
2011-05-05
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
URN:
uuid:e1405a09-49f2-49c1-9e80-be617c40720e
Source identifiers:
127187
Local pid:
pubs:127187

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