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RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS

Abstract:
We report photoluminescence and Raman scattering measurements of periodically δ-doped Si : GaAs. The spectra of short-period structures are similar to those of uniformly doped material, but new lines appear in the Raman spectra of longer-period structures that arise from inter-subband transitions between confined electron levels in a single δ-layer or between minibands in the δ-doping superlattice. © 1990.
Publication status:
Published

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Volume:
228
Issue:
1-3
Pages:
251-254
Publication date:
1990-04-05
DOI:
ISSN:
0039-6028
URN:
uuid:df23c188-2fe0-40d4-9696-9c8df73c2735
Source identifiers:
30600
Local pid:
pubs:30600

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