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ELECTRONIC STATES IN GAAS V-GROOVE QUANTUM-WIRE STRUCTURES WITH SUPERLATTICE BARRIERS

Abstract:

We present a joint theoretical and experimental investigation of GaAs v-groove quantum wires confined in GaAs/AlAs superlattice barriers. We have computed the electronic states for both the quantum wire and the barriers. The intrinsic bending of the superlattice layers, together with systematic spatial variations of their thickness, create localized states in the barriers that are separated from the wire. This effect has a strong impact on the overall luminescence efficiency of the wires. The...

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Publication status:
Published

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Publisher copy:
10.1063/1.114806

Authors


FREYLAND, J More by this author
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Journal:
APPLIED PHYSICS LETTERS
Volume:
67
Issue:
19
Pages:
2851-2853
Publication date:
1995-11-06
DOI:
ISSN:
0003-6951
URN:
uuid:dd770597-65ec-4264-830d-eedf67456dbb
Source identifiers:
5291
Local pid:
pubs:5291
Language:
English

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