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Growth studies of thin film diamond using molecular beam techniques

Abstract:

The heterogrowth of diamond on Si(100) using individual atomic H and methyl molecular beams under high vacuum conditions has been investigated using in situ X-ray photoelectron and associated electron energy loss spectroscopies, along with Raman spectroscopy and secondary electron microscopy. Reaction of the methyl molecular beam along with the heated Si surface is shown to provide an efficient route for the formation of SiC and graphitic carbon phases, which are etched away only slowly using...

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Publication status:
Published

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Publisher copy:
10.1016/0925-9635(95)00421-1

Authors

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Host title:
DIAMOND AND RELATED MATERIALS
Volume:
5
Issue:
3-5
Pages:
231-235
Publication date:
1996-04-01
DOI:
ISSN:
0925-9635
Keywords:
Pubs id:
pubs:45256
UUID:
uuid:dc607f73-96dd-4da4-a46a-04e2de438b2b
Local pid:
pubs:45256
Source identifiers:
45256
Deposit date:
2012-12-19

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