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The properties of nitrogen in silicon

Abstract:

The behaviour of nitrogen in silicon is investigated using the dislocation unlocking technique. Specimens containing well-ordered arrays of dislocations are isothermally annealed for a controlled duration, during which nitrogen segregates to and pins the dislocations. The stress required to unlock the dislocations is then measured by three-point bending at elevated temperature. By analysing the dependence of this unlocking stress on anneal duration and temperature, information about nitrogen'...

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Institution:
University of Oxford
Oxford college:
Oriel College
Department:
Mathematical,Physical & Life Sciences Division - Materials

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Role:
Supervisor
Publication date:
2008
Type of award:
DPhil
Level of award:
Doctoral
Awarding institution:
Oxford University, UK
URN:
uuid:db25d0a2-c3ca-432b-86be-f2c5ff1daf6f
Local pid:
ora:2853

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