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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Abstract:: GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group. © 2009 IEEE.

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APA Style

Gao, Q., Joyce, H., Paiman, S., Tan, H., Kim, Y., Smith, L., Jackson, H., Yarrison-Rice, J., Zhang, X., Zou, J., & Jagadish, C. (2009). Epitaxy of III-V semiconductor nanowires towards optoelectronic devices.

MLA Style

Gao, Q., et al. Epitaxy of III-V Semiconductor Nanowires towards Optoelectronic Devices. 2009.

Chicago Style

Gao, Q, H Joyce, S Paiman, H Tan, Y Kim, L Smith, H Jackson, et al. 2009. “Epitaxy of III-V Semiconductor Nanowires towards Optoelectronic Devices.” In .
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Publisher copy:: 10.1109/OECC.2009.5219756

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+ Joyce, H More by this author

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+ Paiman, S More by this author

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Bibliographic Details

Host title:: 2009 14th OptoElectronics and Communications Conference, OECC 2009
Publication date:: 2009-01-01
DOI:: 10.1109/OECC.2009.5219756
ISBN:: 9781424441037

Item Description

Pubs id:: pubs:172733
UUID:: uuid:da4af907-5715-4676-8653-51ffa4b1a797
Local pid:: pubs:172733
Source identifiers:: 172733
Deposit date:: 2012-12-19

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Copyright date:: 2009

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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