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Epitaxy of III-V semiconductor nanowires towards optoelectronic devices

Abstract:
GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by MOCVD via VLS mechanism. In this paper, I will give an overview of nanowire research activities in our group. © 2009 IEEE.

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Publisher copy:
10.1109/OECC.2009.5219756

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Host title:
2009 14th OptoElectronics and Communications Conference, OECC 2009
Publication date:
2009-01-01
DOI:
Source identifiers:
172733
ISBN:
9781424441037
Pubs id:
pubs:172733
UUID:
uuid:da4af907-5715-4676-8653-51ffa4b1a797
Local pid:
pubs:172733
Deposit date:
2012-12-19

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