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Abnormal photoluminescence properties of GaN nanorods grown on Si(111) by molecular-beam epitaxy.

Abstract:

We have studied the photoluminescence properties of GaN nanorods grown on Si(111) substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shaped nanorods with lateral average diameters from 30 to 150 nm are obtained by controlling the Ga flux with a fixed amount of nitrogen. As the diameters decrease, the main emission lines assigned as donor bound excitons are blueshifted, causing a spectral overlap of this emission line with that of the free exciton at 10 K due t...

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Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Physics, Condensed Matter Physics
Role:
Author
Journal:
Nanotechnology
Volume:
19
Issue:
47
Pages:
475402
Publication date:
2008-11-05
DOI:
EISSN:
1361-6528
ISSN:
0957-4484
URN:
uuid:d6285900-3429-4166-9612-f84227565001
Source identifiers:
27666
Local pid:
pubs:27666
Language:
English

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