- Abstract:
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III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum eff...
Expand abstract - Publisher copy:
- 10.1109/ICMAP.2013.6733456
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- Journal:
- 2013 International Conference on Microwave and Photonics, ICMAP 2013
- Publication date:
- 2013-01-01
- DOI:
- URN:
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uuid:d5a34b00-4c94-4451-ba24-70be90bd0422
- Source identifiers:
-
462777
- Local pid:
- pubs:462777
- Language:
- English
- Keywords:
- Copyright date:
- 2013
Journal article
III-V semiconductor nanowires for optoelectronic device applications
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