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III-V semiconductor nanowires for optoelectronic device applications

Abstract:

III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the radiative lifetime of minority carriers in the nanowires is necessary for device applications. Due to the large surface area to volume ratio in the nanowires, non-radiative recombination associated with surface states often results in low quantum eff...

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Publisher copy:
10.1109/ICMAP.2013.6733456

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Journal:
2013 International Conference on Microwave and Photonics, ICMAP 2013
Publication date:
2013-01-01
DOI:
Source identifiers:
462777
Language:
English
Keywords:
Pubs id:
pubs:462777
UUID:
uuid:d5a34b00-4c94-4451-ba24-70be90bd0422
Local pid:
pubs:462777
Deposit date:
2014-06-24

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