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The effect of irradiation temperature on post-irradiation strain levels in GexSi1-x/Si strained layer heterostructures

Abstract:

Double crystal x-ray diffraction (DCXRD), transmission electron microscopy (TEM), and Rutherford backscattering spectroscopy and channelling (RBS-C) were used to study the effect of irradiation temperature and ion-energy on the perpendicular strain (epsilon perpendicular to in GexSi1-x/Si strained layer heterostructures. Room temperature irradiation was shown to increase epsilon perpendicular to. This effect was adequately modelled by assuming that irradiation caused additional strain due to ...

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Publication status:
Published

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Publisher copy:
10.1109/COMMAD.1996.610092

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS More from this journal
Pages:
142-145
Publication date:
1996-01-01
Event title:
1996 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 9)
DOI:
ISBN:
0780333748
Pubs id:
pubs:20294
UUID:
uuid:d581311c-c87b-489e-b234-586d017d87f9
Local pid:
pubs:20294
Source identifiers:
20294
Deposit date:
2012-12-19

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