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Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition

Abstract:: We have investigated the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures, fabricated by metalorganic chemical vapor deposition. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGa...
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APA Style

Joyce, H., Kim, Y., Gao, Q., Tan, H., & Jagadish, C. (2007). Growth of III-V nanowires and nanowire heterostructures by metalorganic chemical vapor deposition. 567–570.

MLA Style

Joyce, H., et al. Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition. 2007, pp. 567–70.

Chicago Style

Joyce, H, Y Kim, Q Gao, H Tan, and C Jagadish. 2007. “Growth of III-V Nanowires and Nanowire Heterostructures by Metalorganic Chemical Vapor Deposition.” In , 567–70.
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Publisher copy:: 10.1109/NEMS.2007.352082

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+ Joyce, H More by this author

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+ Kim, Y More by this author

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+ Gao, Q More by this author

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+ Tan, H More by this author

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+ Jagadish, C More by this author

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Bibliographic Details

Host title:: Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007
Pages:: 567-570
Publication date:: 2007-01-01
DOI:: 10.1109/NEMS.2007.352082
ISBN-10:: 1424406102
ISBN-13:: 9781424406104

Item Description

Keywords:: Heterostructure

MOCVD

Nanowire
Pubs id:: pubs:172708
UUID:: uuid:d3bebbb3-240a-4727-9aff-e38c763d5ad5
Local pid:: pubs:172708
Source identifiers:: 172708
Deposit date:: 2012-12-19

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Copyright date:: 2007

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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