Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates

Conference item

GaAs nanowires were grown on Si (111) substrates. By coating a thin GaAs buffer layer on Si surface and using a two-temperature growth, the morphology and crystal structure of GaAs nanowires were dramatically improved. The strained GaAs/GaP core-shell nanowires, based on the improved GaAs nanowires with a shell thickness of 25 nm, showed a significant shift in emission energy of 260 meV from the unstrained GaAs nanowires. © 2010 IEEE.

Authors: Kang, J; Gao, Q; Joyce, H; Kim, Y; Guo, Y

• Host title: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
• Pages: 57-58
• Publication date: 2010-01-01
• DOI: 10.1109/COMMAD.2010.5699778
• ISBN: 9781424473328