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Structural, optical and electrical properties of In4Sn3O12 films prepared by pulsed laser deposition

Abstract:

Highly conducting (σ ∼ 2.6 × 103 Ω-1 cm-1) In4Sn3O12 films have been deposited using pulsed laser deposition (PLD) on glass and quartz substrates held at temperatures between 350 and 550 °C under chamber pressures of between 2.5 and 15 mTorr O2. The crystallinity and the surface roughness of the films were found to increase with increasing substrate temperature. Electron concentrations of the order of 5 × 1020 cm-3 and mobilities as high as 30 cm2 V-1 s-1 were determined from Hall effect meas...

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Publication status:
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Authors


O'Neil, DH More by this author
Kuznetsov, VL More by this author
Jacobs, RMJ More by this author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Chemistry, Inorganic Chemistry
Journal:
MATERIALS CHEMISTRY AND PHYSICS
Volume:
123
Issue:
1
Pages:
152-159
Publication date:
2010-09-01
DOI:
ISSN:
0254-0584
URN:
uuid:d1d6fc67-e9f7-4e17-9f18-192ccb4dfcdc
Source identifiers:
65297
Local pid:
pubs:65297

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