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SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATION IN SILICON USING A COMPUTERISED EBIC SYSTEM.

Abstract:

A system is described incorporating a PDP11/03 minicomputer for control and on-line data collection of a lock-in EBIC set up based on a JSM-35X SEM. The system has been primarily used for the measurement of EBIC contrast from individual deformation-induced dislocations in Si. In order to interpret the contrast results more fully, it is necessary to know the minority carrier diffusion length. This has been measured at 110K and 300K for a n-type Si specimen containing deformation induced disloc...

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Volume:
44
Issue:
9
Pages:
445-450
Host title:
Journal de Physique (Paris), Colloque
Publication date:
1983-09-01
ISSN:
0449-1947
Source identifiers:
502431
ISBN:
2902731639
Pubs id:
pubs:502431
UUID:
uuid:d1222c66-e1ce-4e91-bccf-3b127028a4bb
Local pid:
pubs:502431
Deposit date:
2015-01-15

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