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Methane chemical vapor deposition on transition metal/GaAs samples - A possible route to Haeckelite carbon nanotubes?

Abstract:

We present a systematic study of atmospheric chemical vapor deposition growth of carbon nanotubes (CNTs) on patterned, transition metal/GaAs samples employing methane as the carbon feedstock. Controlled CNT growth was found to occur from the exposed metal-semiconductor interface, rather than from the metal or semiconductor surfaces themselves. A fast sample loading system allowed for a minimization of the exposure to high temperatures, thereby preventing excessive sample damage. The optimum g...

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Publisher copy:
10.1002/sia.3827
Journal:
Surface and Interface Analysis More from this journal
Volume:
44
Issue:
4
Pages:
456-465
Publication date:
2012-04-01
DOI:
EISSN:
1096-9918
ISSN:
0142-2421
Language:
English
Keywords:
Pubs id:
pubs:321413
UUID:
uuid:d11a85c0-f316-443d-bd37-37b71a927546
Local pid:
pubs:321413
Source identifiers:
321413
Deposit date:
2012-12-19

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