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Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Abstract:

Secondary electron (SE) imaging in a scanning electron microscope is used to map electrically active dopant distributions of B-doped superlattices in Si. By comparing SE contrast profiles with secondary ion mass spectroscopy data, it is shown that B is electrically deactivated when the damage caused during Si implantation falls onto a doped region. Following a 450°C anneal, the effect of the implantation damage is severely reduced in the SE profiles and the B is partially reactivated. An 815°...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1063/1.123832

Authors


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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Research group:
Castell Group: Surface Nanoscience
Role:
Author
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Institution:
"University of Western Ontario, London, Canada"
Department:
Department of Physics and Astronomy
Role:
Author
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Institution:
"University of Western Ontario, London, Canada"
Department:
Department of Physics and Astronomy
Role:
Author
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Institution:
"University of Toronto, Toronto, Canada"
Department:
Department of Metallurgy and Materials Science
Role:
Author
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Institution:
"Institute for Microstructural Sciences, National Research Council, Ottawa, Canada"
Role:
Author
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Name:
Natural Sciences and Engineering Research Council of Canada
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Name:
Ontario Center for Materials Research
Publisher:
American Institute of Physics
Journal:
Applied Physics Letters More from this journal
Volume:
74
Issue:
16
Pages:
2304-2306
Publication date:
1999-04-01
DOI:
EISSN:
1077-3118
ISSN:
0003-6951
Language:
English
Keywords:
Subjects:
UUID:
uuid:d0a29814-45ac-443c-85d8-8660436f7401
Local pid:
ora:1424
Deposit date:
2008-03-14

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