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Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

Abstract:

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies ...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Physical Review Letters More from this journal
Volume:
91
Issue:
26 Pt 1
Pages:
267601
Publication date:
2003-12-01
DOI:
EISSN:
1079-7114
ISSN:
0031-9007
Language:
English
Pubs id:
pubs:172932
UUID:
uuid:d09f3b28-5a71-41aa-b1fd-8d5b5f8bb2e8
Local pid:
pubs:172932
Source identifiers:
172932
Deposit date:
2012-12-19

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