Dielectric discontinuity at interfaces in the atomic-scale limit: permittivity of ultrathin oxide films on silicon.

Journal article

Using a density-functional approach, we study the dielectric permittivity across interfaces at the atomic scale. Focusing on the static and high-frequency permittivities of SiO2 films on silicon, for oxide thicknesses from 12 A down to the atomic scale, we find a departure from bulk values in accord with experiment. A classical three-layer model accounts for the calculated permittivities and is supported by the microscopic polarization profile across the interface. The local screening varies ...

Expand abstract

Authors: Giustino, F; Umari, P; Pasquarello, A

• Publication status: Published
• Journal: Physical Review Letters
• Volume: 91
• Issue: 26 Pt 1
• Pages: 267601
• Publication date: 2003-12-01
• DOI: 10.1103/physrevlett.91.267601
• EISSN: 1079-7114
• ISSN: 0031-9007
• Language: English