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SEM imaging of contrast arising from different doping concentrations in semiconductors

Abstract:
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structures is reported. The SE signal of standard and field-emission SEMs is used to produce images in which contrast between n- and p-doped layers is visible. The contrast arising from the differently doped layers is electronic in origin. The contrast is small, 1-5%, and the spatial resolution is found to be better than 0.1 mu m for the samples imaged in this work.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995
Volume:
146
Pages:
609-612
Publication date:
1995-01-01
Event title:
Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995
ISSN:
0951-3248
Source identifiers:
30295
ISBN:
0750303476
Keywords:
Pubs id:
pubs:30295
UUID:
uuid:d00e4102-22d2-4c8e-9623-14d76a2964af
Local pid:
pubs:30295
Deposit date:
2012-12-19

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