Conference item
SEM imaging of contrast arising from different doping concentrations in semiconductors
- Abstract:
- A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structures is reported. The SE signal of standard and field-emission SEMs is used to produce images in which contrast between n- and p-doped layers is visible. The contrast arising from the differently doped layers is electronic in origin. The contrast is small, 1-5%, and the spatial resolution is found to be better than 0.1 mu m for the samples imaged in this work.
- Publication status:
- Published
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Bibliographic Details
- Journal:
- MICROSCOPY OF SEMICONDUCTING MATERIALS 1995
- Volume:
- 146
- Pages:
- 609-612
- Publication date:
- 1995-01-01
- Event title:
- Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995
- ISSN:
-
0951-3248
- Source identifiers:
-
30295
- ISBN:
- 0750303476
Item Description
- Keywords:
- Pubs id:
-
pubs:30295
- UUID:
-
uuid:d00e4102-22d2-4c8e-9623-14d76a2964af
- Local pid:
- pubs:30295
- Deposit date:
- 2012-12-19
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- Copyright date:
- 1995
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