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SEM imaging of contrast arising from different doping concentrations in semiconductors

Abstract:
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structures is reported. The SE signal of standard and field-emission SEMs is used to produce images in which contrast between n- and p-doped layers is visible. The contrast arising from the differently doped layers is electronic in origin. The contrast is small, 1-5%, and the spatial resolution is found to be better than 0.1 mu m for the samples imaged in this work.
Publication status:
Published

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
More by this author
Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Volume:
146
Pages:
609-612
Publication date:
1995-01-01
ISSN:
0951-3248
URN:
uuid:d00e4102-22d2-4c8e-9623-14d76a2964af
Source identifiers:
30295
Local pid:
pubs:30295
ISBN:
0-7503-0347-6
Keywords:

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