SEM imaging of contrast arising from different doping concentrations in semiconductors

Sealy, CP; Castell, MR; Wilkinson, AJ; Wilshaw, PR

Abstract:

A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structures is reported. The SE signal of standard and field-emission SEMs is used to produce images in which contrast between n- and p-doped layers is visible. The contrast arising from the differently doped layers is electronic in origin. The contrast is small, 1-5%, and the spatial resolution is found to be better than 0.1 mu m for the samples imaged in this work.

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APA Style

Sealy, C. P., Castell, M. R., Wilkinson, A. J., & Wilshaw, P. R. (1995). SEM imaging of contrast arising from different doping concentrations in semiconductors. 146, 609–612.

MLA Style

Sealy, C. P., et al. SEM Imaging of Contrast Arising from Different Doping Concentrations in Semiconductors. 1995, pp. 609–12.

Chicago Style

Sealy, CP, MR Castell, AJ Wilkinson, and PR Wilshaw. 1995. “SEM Imaging of Contrast Arising from Different Doping Concentrations in Semiconductors.” In , 146:609–12.
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+ Sealy, CP More by this author

Role:

Author

+ Castell, MR More by this author

Institution:

University of Oxford

Department:

Oxford, MPLS, Materials

Role:

Author

+ Wilkinson, AJ More by this author

Role:

Author

+ Wilshaw, PR More by this author

Institution:

University of Oxford

Department:

Oxford, MPLS, Materials

Role:

Author

Bibliographic Details

Volume:: 146
Pages:: 609-612
Publication date:: 1995-01-01
ISSN:: 0951-3248
URN:: uuid:d00e4102-22d2-4c8e-9623-14d76a2964af
Source identifiers:: 30295
Local pid:: pubs:30295
ISBN:: 0-7503-0347-6

Item Description

Keywords:: SURFACES

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