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Minority carrier lifetime in silicon photovoltaics: The effect of oxygen precipitation

Abstract:

Single-crystal Czochralski silicon used for photovoltaics is typically supersaturated with interstitial oxygen at temperatures just below the melting point. Oxide precipitates therefore can form during ingot cooling and cell processing, and nucleation sites are typically vacancy-rich regions. Oxygen precipitation gives rise to recombination centres, which can reduce cell efficiencies by as much as 4% (absolute). We have studied the recombination behaviour in p-type and n-type monocrystalline ...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1016/j.solmat.2013.06.018

Authors


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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
McGuire, RE More by this author
Voronkov, VV More by this author
Falster, RJ More by this author
Publisher:
Elsevier Publisher's website
Journal:
Solar Energy Materials and Solar Cells Journal website
Volume:
120
Pages:
402-411
Publication date:
2014
DOI:
ISSN:
0927-0248
URN:
uuid:cf88c4fd-45b9-4c4f-afde-eef1f2e68b17
Source identifiers:
415810
Local pid:
pubs:415810

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