Journal article icon

Journal article

Semi-insulating silicon for microwave devices

Abstract:

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ∼180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the p...

Expand abstract

Actions


Access Document


Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Publisher:
Trans Tech Publications Ltd
Journal:
Solid State Phenomena More from this journal
Volume:
156-158
Pages:
101-106
Publication date:
2009-01-01
DOI:
EISSN:
1662-9779
ISSN:
1012-0394
Language:
English
Keywords:
Pubs id:
pubs:297916
UUID:
uuid:cf3afac1-8e4f-4bff-bb3b-3f10ae42d716
Local pid:
pubs:297916
Source identifiers:
297916
Deposit date:
2015-01-15

Terms of use


Views and Downloads






If you are the owner of this record, you can report an update to it here: Report update to this record

TO TOP