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Deposition and characterisation of a porous Sn(IV) semiconductor nanofilm on boron-doped diamond

Abstract:

Nanofilm deposits of a porous Sn(IV) oxide are formed by anodic electrodeposition on a polished boron-doped diamond electrode immersed in an aqueous Sn2+ solution. Mechanically and electrochemically stable deposits of 10-15 nm thickness are formed irrespective of the Sn2+ concentration and mass-transport enhancement by power ultrasound. Atomic force microscopy images indicate the presence of a smooth and noncrystalline film, which is stable under ambient conditions. n-type semiconducting char...

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Publication status:
Published

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Publisher copy:
10.1007/s100080100217

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
JOURNAL OF SOLID STATE ELECTROCHEMISTRY More from this journal
Volume:
6
Issue:
3
Pages:
183-187
Publication date:
2002-03-01
DOI:
ISSN:
1432-8488
Language:
English
Keywords:
Pubs id:
pubs:38155
UUID:
uuid:cec4ccd4-1d07-4455-9bb1-3f3eba99b2d2
Local pid:
pubs:38155
Source identifiers:
38155
Deposit date:
2012-12-19

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