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Journal article

Microsecond carrier lifetimes in InGaAsP quantum wells emitting at λ = 1.5 μm

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Publisher copy:
10.1063/1.1459490

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Applied Physics Letters
Volume:
80
Issue:
11
Pages:
1870-1870
Publication date:
2002-01-01
DOI:
ISSN:
0003-6951
Pubs id:
pubs:6815
UUID:
uuid:cec15bf3-e091-450a-a382-1e46af3280c7
Local pid:
pubs:6815
Source identifiers:
6815
Deposit date:
2012-12-19

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