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Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications

Abstract:

This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such a...

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Publisher copy:
10.1109/COMMAD.2012.6472356
Host title:
Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages:
53-54
Publication date:
2012-01-01
DOI:
ISBN:
9781467330459
Pubs id:
pubs:423480
UUID:
uuid:ce1d49c3-07d6-412f-b4ed-2605b8c863ea
Local pid:
pubs:423480
Source identifiers:
423480
Deposit date:
2013-11-16

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