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MODULATED MOLECULAR-BEAM MASS-SPECTROMETRY STUDIES OF THE GROWTH OF GAAS AND INXGA1-XAS USING TRI-ISOBUTYLGALLIUM

Abstract:

Modulated molecular beam mass spectroscopy (MBMS) studies of the CBE growth of GaAs and InxGa1-xAs using tri-isobutylgallium (TiBG) have been carried out. The results show similarities to studies which have been carried out previously using triethylgallium (TEG) in that hey indicate that the GRa deposition efficiency is controlled by a temperature-dependent probability for the desorption of alkyls from the growth surface. Differing decomposition temperatures, desorbing species and effects ari...

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Publication status:
Published

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Publisher:
Elsevier
Volume:
136
Issue:
1-4
Pages:
109-113
Host title:
JOURNAL OF CRYSTAL GROWTH
Publication date:
1994-03-01
DOI:
ISSN:
0022-0248
Source identifiers:
44422
Pubs id:
pubs:44422
UUID:
uuid:ce0fe52e-18e5-4ebc-8220-f7e963edf062
Local pid:
pubs:44422
Deposit date:
2012-12-19

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