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Determining the optimized interlayer separation distance in vertical stacked 2D WS2 :hBN:MoS2 heterostructures for exciton energy transfer

Abstract:

The 2D semiconductor monolayer transition metal dichalcogenides, WS2 and MoS2 , are grown by chemical vapor deposition (CVD) and assembled by sequential transfer into vertical layered heterostructures (VLHs). Insulating hBN, also produced by CVD, is utilized to control the separation between WS2 and MoS2 by adjusting the layer number, leading to fine-scale tuning of the interlayer interactions within the VLHs. The interlayer interactions are studied by photoluminescence (PL) spectroscopy and ...

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Publication status:
Published
Peer review status:
Peer reviewed

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Publisher copy:
10.1002/smll.201703727

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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
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Institution:
University of Oxford
Division:
MPLS Division
Department:
Materials
Role:
Author
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Publisher:
Wiley Publisher's website
Journal:
Small Journal website
Volume:
14
Issue:
13
Pages:
e1703727
Publication date:
2018-02-07
Acceptance date:
2017-12-01
DOI:
EISSN:
1613-6829
ISSN:
1613-6810
Pmid:
29411935
Source identifiers:
823225
Language:
English
Keywords:
Pubs id:
pubs:823225
UUID:
uuid:cddb194a-5881-47cc-8fb7-6294dc4b0f24
Local pid:
pubs:823225
Deposit date:
2018-04-16

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