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Locking of dislocations by oxygen in Cz-silicon

Abstract:

The effect of dislocation locking by oxygen atoms in silicon has been studied for annealing temperatures between 400 degrees C and 850 degrees C and annealing times of 0-1300 h. Using an experimental technique based on four-point and three-point bending the unlocking stress of dislocations has been obtained. It has been shown that the unlocking stress increases with increasing annealing temperature, time and oxygen content. At high temperatures, however, after an initial increase the unlockin...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
PROCEEDINGS OF THE THIRD INTERNATIONAL SYMPOSIUM ON DEFECTS IN SILICON More from this journal
Volume:
99
Issue:
1
Pages:
280-289
Publication date:
1999-01-01
Event title:
3rd International Symposium on Defects in Silicon, at the 195th Meeting of the Electrochemical-Society
ISBN:
1566772230
Keywords:
Pubs id:
pubs:27706
UUID:
uuid:cdae7824-6f71-4e40-94d9-54e051f24715
Local pid:
pubs:27706
Source identifiers:
27706
Deposit date:
2012-12-19

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