Conference item
The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers
- Abstract:
-
We have studied the effect of annealing AIN buffer layers on the properties of subsequently grown GaN layers. The AIN buffer layer was deposited on a Si(111) substrate by using RF sputtering, and different samples were then annealed at temperatures of 700 degrees C, 800 degrees C, and 900 degrees C. Thick GaN was grown using a hydride vapor phase epitaxy (HVPE) system for 1 hour at 1050 degrees C with the resultant thickness being 150 mu m. The morphologies of the AIN and the GaN layers were ...
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- Publication status:
- Published
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Bibliographic Details
- Journal:
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume:
- 48
- Issue:
- 6
- Pages:
- 1255-1258
- Publication date:
- 2006-06-01
- Event title:
- 4th International Conference on Advanced Materials and Devices/6th Symposium on the Nano-Technology and Plasma Application for Next Generation Processing
- ISSN:
-
0374-4884
- Source identifiers:
-
29896
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- Copyright date:
- 2006
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