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The structural properties of GaN grown on Si substrates by using various annealing conditions for the AlN buffer layers

Abstract:

We have studied the effect of annealing AIN buffer layers on the properties of subsequently grown GaN layers. The AIN buffer layer was deposited on a Si(111) substrate by using RF sputtering, and different samples were then annealed at temperatures of 700 degrees C, 800 degrees C, and 900 degrees C. Thick GaN was grown using a hydride vapor phase epitaxy (HVPE) system for 1 hour at 1050 degrees C with the resultant thickness being 150 mu m. The morphologies of the AIN and the GaN layers were ...

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Publication status:
Published

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Volume:
48
Issue:
6
Pages:
1255-1258
Publication date:
2006-06-05
ISSN:
0374-4884
URN:
uuid:ccaedf32-8e6e-4177-85a5-6d01198dc661
Source identifiers:
29896
Local pid:
pubs:29896
Keywords:

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