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Growth of microscale In2O3 islands on Y-stabilized zirconia(100) by molecular beam epitaxy

Abstract:

The growth of micrometer sized arrays of InO islands on Y-stabilized ZrO(100) was investigated. Indium oxide layers were grown on Y-stabilized ZrO(100) substrates in a UHV oxide MBE system with a base pressure of 5 × 10 mbar and incorporating an indium Knudsen cell and a radiofrequency oxygen plasma source. Substrates were cleaned by exposure to the oxygen atom beam at a substrate temperature of 900 °C. Films were then grown to an estimated thickness of 120 nm with a deposition rate of 0.04 n...

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Publication status:
Published

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Publisher copy:
10.1021/cm800984r

Authors


More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
More by this author
Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Physical & Theoretical Chem
Role:
Author
Journal:
CHEMISTRY OF MATERIALS More from this journal
Volume:
20
Issue:
14
Pages:
4551-4553
Publication date:
2008-07-22
DOI:
EISSN:
1520-5002
ISSN:
0897-4756
Pubs id:
pubs:15478
UUID:
uuid:cc82e8c8-3e21-4696-89e9-73a89f4d68be
Local pid:
pubs:15478
Source identifiers:
15478
Deposit date:
2012-12-19

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