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Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

Abstract:

Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InS...

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Publication status:
Published

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Journal:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 More from this journal
Issue:
157
Pages:
353-356
Publication date:
1997-01-01
Event title:
Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:
0951-3248
ISBN:
0750304642
Keywords:
Pubs id:
pubs:23090
UUID:
uuid:cc47982f-f00d-47c4-b742-8222794b7843
Local pid:
pubs:23090
Source identifiers:
23090
Deposit date:
2012-12-19

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