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Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices

Abstract:: Transmission electron microscopy (TEM) and photoluminescence (PL) were used to study metal organic vapour phase epitaxy (MOVPE) self-assembled InSb quantum dots (QDs) grown for the first time in InAs and GaSb matrices. Coherently strained InSb QDs were observed in the InAs matrix sample with a number density approximate to 3x10(9) cm(-2) and diameter 5-10 nn. PL emission was obtained at 3.5 mu m, the longest wavelength yet reported for self-assembled semiconductor QDs. Coherently strained InS...
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APA Style

Norman, A., Mason, N., Fisher, M., Richardson, J., Krier, A., Walker, P., & Booker, G. (1997). Structural and optical characterisation of MOVPE self-assembled InSb quantum dots in InAs and GaSb matrices. MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 157, 353–356.

MLA Style

Norman, A., et al. “Structural and Optical Characterisation of MOVPE Self-Assembled InSb Quantum Dots in InAs and GaSb Matrices.” MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, no. 157, 1997, pp. 353–56.

Chicago Style

Norman, A, N Mason, M Fisher, J Richardson, A Krier, P Walker, and G Booker. 1997. “Structural and Optical Characterisation of MOVPE Self-Assembled InSb Quantum Dots in InAs and GaSb Matrices.” In MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 353–56.
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+ Fisher, M More by this author

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Bibliographic Details

Journal:: MICROSCOPY OF SEMICONDUCTING MATERIALS 1997
Issue:: 157
Pages:: 353-356
Publication date:: 1997-01-01
Event title:: Royal-Microscopical-Society Conference on Microscopy of Semiconducting Materials
ISSN:: 0951-3248
ISBN:: 0750304642

Item Description

Keywords:: PHOTOLUMINESCENCE

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Pubs id:: pubs:23090
UUID:: uuid:cc47982f-f00d-47c4-b742-8222794b7843
Local pid:: pubs:23090
Source identifiers:: 23090
Deposit date:: 2012-12-19

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Copyright date:: 1997

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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