Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature

Conference item

Authors: Boch, J; Saigne, E; Maurel, T; Giustino, F; Dusseau, L

• Publication status: Published
• Host title: IEEE TRANSACTIONS ON NUCLEAR SCIENCE
• Volume: 49
• Issue: 3
• Pages: 1474-1479
• Publication date: 2002-06-01
• DOI: 10.1109/TNS.2002.1039686
• ISSN: 0018-9499
• Keywords: radiation responses; oxide trapped charge; current gain; bipolar transistors; optimum temperature irradiation; high dose rate irradiation; NPN transistors; Si; radiation-induced current gain degradation; elevated irradiation temperatures; radiation hardness; interface states; radiation-induced dopant deactivation; 25 degrees C to 170 degrees C; annealing