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Effect of silicon crystal structure on spin transmission through spin electronic devices

Abstract:

Spin injection into and spin transport through silicon spacer layers in iron/silicon/cobalt structures has been investigated. Ultrahigh vacuum evaporated silicon spacers of varying crystal quality from amorphous to epitaxial of thicknesses from 10 to 200 Angstrom were shown to improve their electrical conduction with increasing crystallinity, but no spin dependent transport was observed through the structure. Silicon and iron interdiffusion was also observed at the interfacial region. Device ...

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Publication status:
Published

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Publisher copy:
10.1063/1.373282

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Journal:
JOURNAL OF APPLIED PHYSICS More from this journal
Volume:
87
Issue:
9
Pages:
5161-5163
Publication date:
2000-05-01
Event title:
44th Annual Conference on Magnetism and Magnetic Materials
DOI:
ISSN:
0021-8979
Pubs id:
pubs:29223
UUID:
uuid:cc358a1e-ca50-43cd-8841-68c8abcf5a36
Local pid:
pubs:29223
Source identifiers:
29223
Deposit date:
2012-12-19

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