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Influence of temperature on the epitaxial growth of In2O3 thin films on Y-ZrO2(1 1 1)

Abstract:

The influence of the substrate temperature on the epitaxial growth of In2O3 on Y-stabilized ZrO2(1 1 1) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range between 550 and 860 °C. In all cases the films grow with (1 1 1) planes of the epilayer parallel to those of the substrate. Films grown at low temperature (T<650 °C) are characterised by a granular but continuous morphology. The high density of grain boundaries in these films may act as electron scatterin...

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Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Chemistry
Sub department:
Inorganic Chemistry
Role:
Author
Journal:
JOURNAL OF CRYSTAL GROWTH More from this journal
Volume:
318
Issue:
1
Pages:
345-350
Publication date:
2011-03-01
DOI:
ISSN:
0022-0248
Language:
English
Keywords:
Pubs id:
pubs:138886
UUID:
uuid:cc27ec78-8903-4053-846f-cc94d0850952
Local pid:
pubs:138886
Source identifiers:
138886
Deposit date:
2012-12-19

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