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Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

Abstract:

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging - in the scanning electron microscope - to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02°, in GaN thin films. As EBSD has a spat...

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Journal:
Materials Research Society Symposium Proceedings More from this journal
Volume:
892
Pages:
677-682
Publication date:
2006-01-01
ISSN:
0272-9172
Language:
English
Pubs id:
pubs:284338
UUID:
uuid:cb833815-5a62-46c3-8c6b-75300ac97592
Local pid:
pubs:284338
Source identifiers:
284338
Deposit date:
2013-11-17

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