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On the locking of dislocations by oxygen in silicon

Abstract:

Locking of dislocations by oxygen atoms in Czochralski silicon has been investigated both experimentally and theoretically. Experiments were performed at annealing temperatures between 700 and 850°C for different annealing times and different oxygen concentrations. These showed five distinct regimes for the unlocking stress as a function of annealing time. First the unlocking stress increases almost linearly with time and then saturates. The saturation stress, the time needed to reach saturat...

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Publication status:
Published

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Publisher copy:
10.1080/014186101300060991

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Role:
Author
Journal:
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES
Volume:
81
Issue:
3
Pages:
759-775
Publication date:
2001-03-05
DOI:
ISSN:
0141-8610
URN:
uuid:cb65ca03-fcba-4c8b-93b3-41085c7869c6
Source identifiers:
20688
Local pid:
pubs:20688
Language:
English

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