Conference item
Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes
- Abstract:
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Despite the significant progress in the area, III-nitride LEDs still suffer from reduced efficiency due to a high dislocation density associated with a lack of suitable growth substrates and strong polarisation fields along the c-axis, the predominant growth direction, resulting in the quantum confined stark effect (QCSE). The novel materials studied here have been developed with the aim of reducing both of these effects and consist of a series of GaN and InGaN layers deposited by chemical va...
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- Publication status:
- Published
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Bibliographic Details
- Publisher:
- Institute of Physics Publishing
- Host title:
- ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2013 (EMAG2013)
- Volume:
- 522
- Issue:
- 1
- Pages:
- 012038-012038
- Publication date:
- 2014-01-01
- DOI:
- EISSN:
-
1742-6596
- ISSN:
-
1742-6588
Item Description
- Pubs id:
-
pubs:474990
- UUID:
-
uuid:cb54ff11-0af5-41e8-a92b-6b8ddb2fcdec
- Local pid:
- pubs:474990
- Source identifiers:
-
474990
- Deposit date:
- 2014-10-13
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- Copyright date:
- 2014
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