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Electron field emission from ion-implanted diamond

Abstract:

Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 10 to the power 14-10 to the power 15 /cm². This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm² can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-im...

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Publication status:
Published
Peer review status:
Peer reviewed
Version:
Publisher's version

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Publisher copy:
10.1063/1.114993

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Institution:
"AT&T Bell Laboratories, Murray Hill, New Jersey, US"
More by this author
Institution:
"AT&T Bell Laboratories, Murray Hill, New Jersey, US"
More by this author
Institution:
"AT&T Bell Laboratories, Murray Hill, New Jersey, US"
More by this author
Institution:
"AT&T Bell Laboratories, Murray Hill, New Jersey, US"
More by this author
Institution:
"AT&T Bell Laboratories, Murray Hill, New Jersey, US"
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Publisher:
American Institute of Physics Publisher's website
Journal:
Applied Physics Letters Journal website
Volume:
67
Issue:
8
Pages:
1157-1159
Publication date:
1995-08-05
DOI:
EISSN:
1077-3118
ISSN:
0003-6951
URN:
uuid:cb16853e-97a2-4e5a-85af-a6c86b03c730
Local pid:
ora:1447
Language:
English
Keywords:
Subjects:

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