- Abstract:
-
Diamond films and islands grown by chemical vapor deposition were implanted with boron, sodium, and carbon ions at doses of 10 to the power 14-10 to the power 15 /cm². This structural modification at the subsurface resulted in a significant reduction of the electric field required for electron emission. The threshold field for producing a current density of 10 mA/cm² can be as low as 42 V/μm for the as-implanted diamond compared to 164 V/μm for the high quality p-type diamond. When the ion-im...
Expand abstract - Publication status:
- Published
- Peer review status:
- Peer reviewed
- Version:
- Publisher's version
- Files:
-
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(pdf, 156.4kb)
-
- Publisher copy:
- 10.1063/1.114993
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- Publisher:
- American Institute of Physics Publisher's website
- Journal:
- Applied Physics Letters Journal website
- Volume:
- 67
- Issue:
- 8
- Pages:
- 1157-1159
- Publication date:
- 1995-08-05
- DOI:
- EISSN:
-
1077-3118
- ISSN:
-
0003-6951
- URN:
-
uuid:cb16853e-97a2-4e5a-85af-a6c86b03c730
- Local pid:
- ora:1447
- Language:
- English
- Keywords:
- Subjects:
- Copyright holder:
- American Institute of Physics
- Copyright date:
- 1995
- Notes:
- Dr Kochanski is now based at the University of Oxford Phonetics Laboratory. Citation: Zhu, W. et al. (1995). 'Electron field emission from ion-implanted diamond', Applied Physics Letters, 67(8), 1157-1159. [Available at http://apl.aip.org/].
Journal article
Electron field emission from ion-implanted diamond
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