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Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T

Abstract:
We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum limit. New features are observed for low electron densities at high magnetic field, which we suggest are associated with the formation of negatively charged excitons, both singlet and triplet states. The dependence of the spectra on temperature and carrier density are presented in support of this theory. (C) 1998 Elsevier Science B.V. All rights reserved.
Publication status:
Published

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Institution:
University of Oxford
Division:
MPLS
Department:
Physics
Sub department:
Condensed Matter Physics
Role:
Author
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Journal:
PHYSICA B-CONDENSED MATTER
Volume:
251
Pages:
562-565
Publication date:
1998-06-01
Event title:
12th International Conference on Electronic Properties of 2-Dimensional Systems
DOI:
ISSN:
0921-4526
Source identifiers:
23978
Keywords:
Pubs id:
pubs:23978
UUID:
uuid:caab22b4-81a6-40aa-bad8-fb839aedff26
Local pid:
pubs:23978
Deposit date:
2012-12-19

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