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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.

Abstract:
A new theory is proposed for recombination at charged dislocations in semiconductors. This is applied to EBIC contrast from individual dislocations.

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Institution:
University of Oxford
Department:
Oxford, MPLS, Materials
Booker, GR More by this author
Journal:
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume:
51
Issue:
9
Pages:
109-113
Publication date:
1986
ISSN:
0001-432X
URN:
uuid:ca5431bc-2fac-4ffd-a422-80ceaa03f5f5
Source identifiers:
502427
Local pid:
pubs:502427
Language:
English

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