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DISLOCATION RECOMBINATION THEORY FOR SILICON AND INTERPRETATION OF EBIC CONTRAST IN TERMS OF FUNDAMENTAL DISLOCATION PARAMETERS.

Abstract:
A new theory is proposed for recombination at charged dislocations in semiconductors. This is applied to EBIC contrast from individual dislocations.

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Institution:
University of Oxford
Division:
MPLS
Department:
Materials
Role:
Author
Journal:
Bulletin of the Academy of Sciences of the U.S.S.R. Physical series
Volume:
51
Issue:
9
Pages:
109-113
Publication date:
1986-01-01
ISSN:
0001-432X
Source identifiers:
502427
Language:
English
Pubs id:
pubs:502427
UUID:
uuid:ca5431bc-2fac-4ffd-a422-80ceaa03f5f5
Local pid:
pubs:502427
Deposit date:
2015-01-15

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