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Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio

Abstract:: Growth of Au-catalyzed InP nanowires (NWs) by metalorganic chemical vapor deposition (MOCVD) has been studied in the temperature range of 400-510 °C and V/III ratio of 44-700. We demonstrate that minimal tapering of InP NWs can be achieved at 400 °C and V/III ratio of 350. Zinc-blende (ZB) or wurtzite (WZ) NWs is obtained depending on the growth conditions. 4K microphotoluminescence (μ-PL) studies show that emission energy is blue-shifted as growth temperature increases. By changing these gro...
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APA Style

Paiman, S., Gao, Q., Joyce, H., Tan, H., Jagadish, C., Kim, Y., Guo, Y., & Zou, J. (2010). Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio. 37–38.

MLA Style

Paiman, S., et al. Au-Catalyzed InP Nanowires: The Influence of Growth Temperature and V/III Ratio. 2010, pp. 37–38.

Chicago Style

Paiman, S, Q Gao, H Joyce, H Tan, C Jagadish, Y Kim, Y Guo, and J Zou. 2010. “Au-Catalyzed InP Nanowires: The Influence of Growth Temperature and V/III Ratio.” In , 37–38.
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Publisher copy:: 10.1109/COMMAD.2010.5699767

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+ Paiman, S More by this author

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+ Gao, Q More by this author

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+ Joyce, H More by this author

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+ Tan, H More by this author

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+ Jagadish, C More by this author

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Bibliographic Details

Host title:: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Pages:: 37-38
Publication date:: 2010-01-01
DOI:: 10.1109/COMMAD.2010.5699767
ISBN:: 9781424473328

Item Description

Pubs id:: pubs:172763
UUID:: uuid:c9f3232c-0228-40a9-902f-fe55729ae189
Local pid:: pubs:172763
Source identifiers:: 172763
Deposit date:: 2012-12-19

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Copyright date:: 2010

Licence:: Terms and Conditions of Use for Oxford University Research Archive

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