Journal article
Nitrogen in silicon: Transport and mechanical properties
- Abstract:
-
A novel dislocation locking technique is applied to nitrogen-doped float-zone silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured, generally at 550 °C. The segregation of nitrogen to dislocations is found to be stable to at least 1200 °C, and the dislocation unlocking stress measured at 55...
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- Publisher copy:
- 10.1016/j.nimb.2006.10.023
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Bibliographic Details
- Journal:
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
- Volume:
- 253
- Issue:
- 1-2
- Pages:
- 113-117
- Publication date:
- 2006-12-01
- DOI:
- ISSN:
-
0168-583X
- Source identifiers:
-
176459
Item Description
Terms of use
- Copyright date:
- 2006
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