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Nitrogen in silicon: Transport and mechanical properties

Abstract:

A novel dislocation locking technique is applied to nitrogen-doped float-zone silicon. Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during which nitrogen diffuses to the dislocations. The stress required to bring about dislocation motion is then measured, generally at 550 °C. The segregation of nitrogen to dislocations is found to be stable to at least 1200 °C, and the dislocation unlocking stress measured at 55...

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Publisher copy:
10.1016/j.nimb.2006.10.023

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Journal:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume:
253
Issue:
1-2
Pages:
113-117
Publication date:
2006-12-01
DOI:
ISSN:
0168-583X
Source identifiers:
176459
Language:
English
Keywords:
Pubs id:
pubs:176459
UUID:
uuid:c966a618-6e09-41bf-b085-ea9753495d1d
Local pid:
pubs:176459
Deposit date:
2012-12-20

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